l Fast Switching l Low ON Resistance(Rdson≤4.5Ω) l Low Gate Charge (Typical Data:8.5nC) l Low Reverse transfer capacitances(Typical:5.4pF) l 100% Single Pulse avalanche.

Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol VDSS ID IDMa1 VGS E.

VDSS 600 V CS2N60 A4H, the silicon N-channel Enhanced ID 2A VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 35 W which reduce the conduction loss, improve switching RDS(ON)Typ 3.6 Ω performance and enhance the avala.

CS2N60A4HY

CS2N60A4R

CS2N60A4RZ-G

CS2N60A4T

CS2N60A23H

CS2N60A3H

CS2N60A7H

CS2N60

CS2N60B23HP

CS2N60F

CS2N60FA9H

CS2N65A3

CS2N65A3HY